Critical dimension
Use the actual process linewidth and pitch target, not only imaging resolution.
TECHNOLOGY / PATTERNING ROUTES
DMD maskless lithography vs electron beam lithography.
Choose between broader-area optical direct write and critical nanoscale electron-beam patterning.
ENGINEERING CONTEXT
The decision starts with the real constraint.
DMD systems support flexible microscale direct writing with no physical mask, while EBL addresses much smaller critical features at a different write-speed and process complexity. Many R&D workflows benefit from both.
Discuss your requirement ↗CRITICAL REQUIREMENTS
Define these before model selection.
Area & throughput
Map required patterned area, dose and exposure settings to acceptable cycle time.
Overlay & workflow
Plan alignment, resist stacks, inspection and handoff between tools.
SOLUTION ROUTES
Continue from requirement to system.
EVIDENCE CHECKLIST
Ask for evidence that closes the decision.
- Feature measurement
- Area and exposure conditions
- Overlay result
- Process flow
TECHNICAL REVIEW
Turn the requirement into a selection brief.
Send the application, critical parameters and any drawing or process information available.
Discuss your application ↗